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TS921
Rail-to-Rail High Output Current Single Operational Amplifier

Rail-to-rail input and output Low noise: 9nV/Hz Low distortion High output current: 80mA (able to drive 32 loads) High-speed: 4MHz, 1V/s Operating from 2.7V to 12V ESD internal protection: 1.5kV Latch-up immunity Macromodel included in this specification
N DIP8 (Plastic Package) D SO-8 (Plastic Micropackage) P TSSOP8 (Thin Shrink Small Outline Package)
Description
The TS921 is a rail-to-rail single BiCMOS operational amplifier optimized and fully specified for 3V and 5V operation. Its high output current impedances to be driven. allows low-load
Pin connections (top view)
N.C. Inverting Input Non-inverting Input VCC 1 2 3 4
+
The TS921 exhibits very low noise, low distortion and low offset. It has a high output current capability which makes this device an excellent choice for high quality, low voltage or batteryoperated audio systems. The device is stable for capacitive loads up to 500pF.
8 N.C. 7 VCC+ 6 Output 5 N.C.
Applications

Headphone amplifier Piezoelectric speaker driver Sound cards, multimedia systems Line driver, actuator driver

Servo amplifier Mobile phone and portable communication sets Instrumentation with low noise as key factor
November 2005
Rev 3 1/14
www.st.com
14
TS921
Order Codes
Part Number TS921IN TS921ID/IDT -40C, +125C TS921IPT TS921IYD/IYDT Temperature Range Package DIP8 SO-8 TSSOP8 (Thin Shrink Outline Package) SO-8 (automotive grade level) Packing Tube Tube or Tape & Reel 921I Tape & Reel Tube or Tape & Reel 921IY Marking TS921IN
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TS921
Absolute Maximum Ratings
1
Absolute Maximum Ratings
Table 1.
Symbol VCC Vid Vi Tstg Tj Rthja
Key parameters and their absolute maximum ratings
Parameter Supply voltage (1) Differential Input Voltage (2) Input Voltage Storage Temperature Maximum Junction Temperature SO-8 Thermal Resistance Junction to TSSOP8 Ambient DIP8 SO-8 Thermal Resistance Junction to TSSOP8 Case DIP8 HBM Human Body Model(3) Condition Value 14 1 VDD -0.3 to VCC+0.3 -65 to +150 150 125 120 85 40 37 41 1.5 Unit V V V C C C/W
Rthjc
C/W
kV
ESD
Electro-Static Discharge
MM Machine Model(4) CDM Charged Device Model
100 1.5 see note(5) 200
V kV
Output Short Circuit Duration Latch-up Immunity 10sec, Standard package Soldering Temperature 10sec, Pb-free package
mA C
250 260
1. All voltage values, except differential voltage are with respect to network ground terminal. 2. Differential voltages are the non-inverting input terminal with respect to the inverting input terminal. If Vid > 1V, the maximum input current must not exceed 1mA. In this case (Vid > 1V) an input serie resistor must be added to limit input current. 3. Human body model, 100pF discharged through a 1.5k resistor into pin of device. 4. Machine model ESD, a 200pF cap is charged to the specified voltage, then discharged directly into the IC with no external series resistor (internal resistor < 5), into pin to pin of device. 5. There is no short-circuit protection inside the device: short-circuits from the output to Vcc can cause excessive heating. The maximum output current is approximately 80mA, independent of the magnitude of Vcc. Destructive dissipation can result from simultaneous short-circuits on all amplifiers.
Table 2.
Symbol VCC Vicm Toper
Operating conditions
Parameter Supply Voltage Common Mode Input Voltage Range Operating Free Air Temperature Range Value 2.7 to 12 VDD -0.2 to VCC +0.2 -40 to +125 Unit V V C
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Electrical Characteristics
TS921
2
Electrical Characteristics
Table 3.
Symbol Vio DV io Iio Iib VOH VOL Avd
Electrical characteristics for VCC = 3V, VDD = 0V, Vicm = VCC/2, RL connected to VCC/2, Tamb = 25C (unless otherwise specified)
Parameter Input Offset Voltage at Tmin. Tamb Tmax Input Offset Voltage Drift Input Offset Current Input Bias Current High Level Output Voltage Vout = 1.5V Vout = 1.5V RL = 600 RL = 32 RL = 600 RL = 32 Vout = 2Vpk-pk RL = 600 RL = 32 35 16 4 1 60 VCC = 2.7 to 3.3V 60 50 0.7 RL = 600, CL =100pF RL = 600, CL =100pF f = 1kHz Vout = 2Vpk-pk, f = 1kHz, Av = 1, RL = 600 80 80 80 1.3 68 12 9 1.5 V/mV 2.87 2.63 100 180 2 1 15 30 100 Conditions Min. Typ. Max. 3 5 Unit mV V/C nA nA V
Low Level Output Voltage
mV
Large Signal Voltage Gain
GBP ICC CMR SVR Io SR Pm GM en THD
Gain Bandwidth Product Supply Current Common Mode Rejection Ratio Supply Voltage Rejection Ratio Output Short-Circuit Current Slew Rate Phase Margin at Unit Gain Gain Margin Equivalent Input Noise Voltage Total Harmonic Distortion
RL = 600 no load, Vout = VCC/2
MHz mA dB dB mA V/s Degrees dB
nV ----------Hz
0.005
%
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TS921
Table 4.
Symbol Vio DV io Iio Iib VOH
Electrical Characteristics
Electrical characteristics for VCC = 5V, V DD = 0V, Vicm = VCC/2, RL connected to VCC/2, Tamb = 25C (unless otherwise specified)
Parameter Input Offset Voltage at T min. T amb Tmax Input Offset Voltage Drift Input Offset Current Input Bias Current High Level Output Voltage RL = 600 RL = 32 VOL Avd Low Level Output Voltage RL = 600 RL = 32 Vout = 2Vpk-pk RL = 600 RL = 32 GBP ICC CMR SVR Io SR Pm GM en THD Gain Bandwidth Product Supply Current Common Mode Rejection Ratio Supply Voltage Rejection Ratio Output Short-Circuit Current Slew Rate Phase Margin at Unit Gain Gain Margin Equivalent Input Noise Voltage Total Harmonic Distortion RL = 600, CL =100pF RL = 600, CL =100pF f = 1kHz Vout = 2V pk-pk, f = 1kHz, Av = 1, RL = 600 VCC = 4.5to 5.5V RL = 600 no load, Vout = VCC/2 60 60 50 0.7 35 16 4 1 80 80 80 1.3 68 12 9 0.005 1.5 V/mV Vout = 1.5V Vout = 1.5V 4.85 4.4 120 300 2 1 15 30 100 Conditions Min. Typ. Max. 3 5 Unit mV V/C nA nA
V
mV
Large Signal Voltage Gain
MHz mA dB dB mA V/s Degrees dB
nV ----------Hz
%
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Electrical Characteristics
Figure 1.
100 80 60 Output Short-Circuit Current (mA) 40 20 0 -20 -40 -60 -80 -100 -120 0 1 2 3 Output Voltage (V) 4 5
-20 1E +02 G ain (dB )
TS921
Figure 2.
60
Output short circuit vs. output voltage
Voltage gain and phase vs. frequency
180
ph ase
Sink
40
120
gain
R l=10k C l=100pF
Pha se (D e g)
Vcc=0/5V
20
60
0
0
Source
1E +03
1E +04
1E +05 Frequency (H z)
1E +06
1E +07
-60 1E +08
Figure 3.
Output short circuit vs. output voltage
Figure 4.
Equivalent input noise voltage vs. frequency
100 80 O utp u t Sh or t-Cir cu it Cu rre n t (mA)
30
S ink
40 20 0 -20 -40 -60 -80 -100 0 0,5 1 1,5 Output Voltag e (V) 2 2,5 3
Equivalent Input Noise (nV/sqrt(Hz)
60
25
20
Vcc=0/3V
15
10
S ource
5
0 0.01 0.1 1 Frequency (kHz) 10 100
Figure 5.
Output suppply current vs. supply voltage
Figure 6.
0.02
THD + noise vs. frequency
0.015
THD+Noise (%)
0.01
0.005
0 0.01 0.1 1 Frequency (kHz) 10 100
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TS921
Figure 7.
0.04
Electrical Characteristics
THD + noise vs. frequency Figure 8.
10
THD + noise vs. output voltage
0.032
1
THD+Noise (%)
0.024
0.016
THD+Noise (%)
0.1
0.008
0 0.01 0.1 1 Frequency (kHz) 10 100
0.01 0 0.2 0.4 Vout (Vrms) 0.6 0.8 1
Figure 9.
0.7
THD + noise vs. frequency
Figure 10. THD + noise vs. output voltage
10
0.6
1
0.5
THD+Noise (%)
0.4
THD+Noise (%)
0.1
0.3 0.2
0.01
0.1 0 0.01 0.1 1 Frequency (kHz) 10 100
0.001 0 0.2 0.4 0.6 Vout (Vrms) 0.8 1 1.2
Figure 11. THD + noise vs. output voltage
10,000
Figure 12. Open loop gain and phase vs. frequency
50 180
1,000
40
120
THD +N oise (%)
0,100
20 60
0,010
10
0
0 1E+2 1E+3 1E+4 1E+5 Frequency (Hz) 1E+6 1E+7 1E+8
0,001 0 0,2 0,4 0,6 Vout (V rms) 0,8 1 1,2
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Phase (Deg)
Gain (dB)
30
Macromodels
TS921
3
3.1
Macromodels
Important note concerning this macromodel
Please consider following remarks before using this macromodel:

All models are a trade-off between accuracy and complexity (i.e. simulation time). Macromodels are not a substitute to breadboarding; rather, they confirm the validity of a design approach and help to select surrounding component values. A macromodel emulates the NOMINAL performance of a TYPICAL device within SPECIFIED OPERATING CONDITIONS (i.e. temperature, supply voltage, etc.). Thus the macromodel is often not as exhaustive as the datasheet, its goal is to illustrate the main parameters of the product. Data issued from macromodels used outside of its specified conditions (Vcc, Temperature, etc) or even worse: outside of the device operating conditions (Vcc, Vicm, etc) are not reliable in any way.
In Section 3.3, the electrical characteristics resulting from the use of these macromodels are presented.
3.2
Electrical characteristics from macromodelization
Table 5.
Symbol Vio Avd ICC Vicm VOH VOL Isink Isource GBP SR m RL = 10k RL = 10k VO = 3V VO = 0V RL = 600k RL = 10k, CL = 100pF RL = 600k RL = 10k No load, per operator
Electrical characteristics resulting from macromodel simulation at V CC = 3V, VDD = 0V, R L, C L connected to VCC/2, Tamb = 25C (unless otherwise specified)
Conditions Value 0 200 1.2 -0.2 to 3.2 2.95 25 80 80 4 1.3 68 Unit mV V/mV mA V V mV mA mA MHz V/s Degrees
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TS921
Macromodels
3.3
Macromodel code
** Standard Linear Ics Macromodels, 1996. ** CONNECTIONS: * 1 INVERTING INPUT * 2 NON-INVERTING INPUT * 3 OUTPUT * 4 POSITIVE POWER SUPPLY * 5 NEGATIVE POWER SUPPLY .SUBCKT TS921 1 3 2 4 5 (analog) ********************************************************* .MODEL MDTH D IS=1E-8 KF=2.664234E-16 CJO=10F * INPUT STAGE CIP 2 5 1.000000E-12 CIN 1 5 1.000000E-12 EIP 10 5 2 5 1 EIN 16 5 1 5 1 RIP 10 11 8.125000E+00 RIN 15 16 8.125000E+00 RIS 11 15 2.238465E+02 DIP 11 12 MDTH 400E-12 DIN 15 14 MDTH 400E-12 VOFP 12 13 DC 153.5u VOFN 13 14 DC 0 IPOL 13 5 3.200000E-05 CPS 11 15 1e-9 DINN 17 13 MDTH 400E-12 VIN 17 5 -0.100000e+00 DINR 15 18 MDTH 400E-12 VIP 4 18 0.400000E+00 FCP 4 5 VOFP 1.865000E+02 FCN 5 4 VOFN 1.865000E+02 FIBP 2 5 VOFP 6.250000E-03 FIBN 5 1 VOFN 6.250000E-03 * GM1 STAGE *************** FGM1P 119 5 VOFP 1.1 FGM1N 119 5 VOFN 1.1 RAP 119 4 2.6E+06 RAN 119 5 2.6E+06 * GM2 STAGE *************** G2P 19 5 119 5 1.92E-02 G2N 19 5 119 4 1.92E-02 R2P 19 4 1E+07 R2N 19 5 1E+07 ************************** VINT1 500 0 5 GCONVP 500 501 119 4 19.38!send ds VP, I(VP)=(V119-V4)/2/Ut VP 501 0 0 GCONVN 500 502 119 5 19.38!send ds VN, I(VN)=(V119-V5)/2/Ut VN 502 0 0 ********* orientation isink isource ******* VINT2 503 0 5 FCOPY 503 504 VOUT 1 DCOPYP 504 505 MDTH 400E-9
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Macromodels
VCOPYP 505 0 0 DCOPYN 506 504 MDTH 400E-9 VCOPYN 0 506 0 *************************** F2PP 19 5 poly(2) VCOPYP VP 0 0 0 I(vout)*I(VP)=Iout*(V119-V4)/2/Ut F2PN 19 5 poly(2) VCOPYP VN 0 0 0 I(vout)*I(VN)=Iout*(V119-V5)/2/Ut F2NP 19 5 poly(2) VCOPYN VP 0 0 0 I(vout)*I(VP)=Iout*(V119-V4)/2/Ut F2NN 19 5 poly(2) VCOPYN VN 0 0 0 I(vout)*I(VN)=Iout*(V119-V5)/2/Ut * COMPENSATION ************ CC 19 119 25p * OUTPUT*********** DOPM 19 22 MDTH 400E-12 DONM 21 19 MDTH 400E-12 HOPM 22 28 VOUT 6.250000E+02 VIPM 28 4 5.000000E+01 HONM 21 27 VOUT 6.250000E+02 VINM 5 27 5.000000E+01 VOUT 3 23 0 ROUT 23 19 6 COUT 3 5 1.300000E-10 DOP 19 25 MDTH 400E-12 VOP 4 25 1.052 DON 24 19 MDTH 400E-12 VON 24 5 1.052 .ENDS
TS921
0 0.5!multiply 0 0.5 !multiply 0 1.75 !multiply 0 1.75 !multiply
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TS921
Package Mechanical Data
4
Package Mechanical Data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com.
4.1
DIP8 Package
Plastic DIP-8 MECHANICAL DATA
mm. DIM. MIN. A a1 B B1 b b1 D E e e3 e4 F I L Z 0.44 3.3 1.6 0.017 8.8 2.54 7.62 7.62 7.1 4.8 0.130 0.063 0.38 0.7 1.39 0.91 0.5 0.5 9.8 0.346 0.100 0.300 0.300 0.280 0.189 0.015 1.65 1.04 TYP 3.3 0.028 0.055 0.036 0.020 0.020 0.386 0.065 0.041 MAX. MIN. TYP. 0.130 MAX. inch
P001F
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Package Mechanical Data
TS921
4.2
SO-8 Package
SO-8 MECHANICAL DATA
DIM. A A1 A2 B C D E e H h L k ddd 0.1 5.80 0.25 0.40 mm. MIN. 1.35 0.10 1.10 0.33 0.19 4.80 3.80 1.27 6.20 0.50 1.27 0.228 0.010 0.016 TYP MAX. 1.75 0.25 1.65 0.51 0.25 5.00 4.00 MIN. 0.053 0.04 0.043 0.013 0.007 0.189 0.150 0.050 0.244 0.020 0.050 inch TYP. MAX. 0.069 0.010 0.065 0.020 0.010 0.197 0.157
8 (max.)
0.04
0016023/C
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TS921
Package Mechanical Data
4.3
TSSOP8 Package
TSSOP8 MECHANICAL DATA
mm. DIM. MIN. A A1 A2 b c D E E1 e K L L1 0 0.45 0.60 1 0.05 0.80 0.19 0.09 2.90 6.20 4.30 3.00 6.40 4.40 0.65 8 0.75 0 0.018 0.024 0.039 1.00 TYP MAX. 1.2 0.15 1.05 0.30 0.20 3.10 6.60 4.50 0.002 0.031 0.007 0.004 0.114 0.244 0.169 0.118 0.252 0.173 0.0256 8 0.030 0.039 MIN. TYP. MAX. 0.047 0.006 0.041 0.012 0.008 0.122 0.260 0.177 inch
0079397/D
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Revision History
TS921
5
Revision History
Date Feb. 2001 Dec. 2004 Revision 1 2 Changes Initial release - Product in full production. Modifications on AMR table page 2 (explanation of Vid and Vi limits, ESD MM and CDM values added, Rthja added) The following changes were made in this revision: - PPAP references inserted in the datasheet see Table . Order Codes on page 2. - Data in tables Electrical Characteristics on page 4 reformatted for easier use. - Thermal Resistance Junction to Case added in Table 1. on page 3.
Nov. 2005
3
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com
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